Висока сплеск здатність 400a tg40c80 ізольована формована триак

Symbol

Item

Conditions

Ratings

Unit

I_{T RMS} 

R.M.S. On-State Current

Tc

40

A

I_TSM

Surge On-State Current

One cycle, 50Hz/, peak, non-repetitive

400 

A

I²t

I2t

Value for one cycle of surge current

880

A²S

P_GM 

Peak Gate Power Dissipation

10

W

P_{G AV}

Average Gate Power Dissipation

1

W

I_GM

Peak Gate Current

8

A

V_GM 

Peak Gate Voltage

10

V

di/dt

Critical Rate of Rise of On-State Current

IG=100mA,Tj=25  VD=1/2VDRM  dIG/dt=1A/μS

50

A/μS

Tj

Operating Junction Temperature

-25～+125

℃

T_stg 

Storage Temperature

-40～+125

℃

V_ISO 

Isolation Breakdown Voltage R.M.S.

A.C.1 minute

2500

V

Mounting Torque M4

Recommended Value 1.0 ～1.4（10～14）

14

kgf.CM

Symbol

Item

Conditions

Ratings

Unit

I_DRM 

Reptitive Peak Off-State Current, max

VD=VDRM, Single phase, half wave, Tj=125℃

5

mA

V_TM

Peak On-State Voltage, max

On-State Current On-State Current √2X IT (RMS),Inst. measurement

1.55

V

I _GT1 +

1

Gate Trigger Current, max

Tj =25℃, IT=1A, VD=6V

50

mA

I _GT1 -

2

Tj =25℃, IT=1A, VD=6V

50

mA

I _GT3 +

3

-

mA

I _GT3 +

4

Tj =25℃, IT=1A, VD=6V

50

mA

V _GT1+

1

Gate Trigger Voltage, max

Tj =25℃, IT=1A, VD=6V

3

V

V _GT1-  

2

Tj =25℃, IT=1A, VD=6V

3

V

V _GT3+

3

-

V

V _GT3-

4

Tj =25℃, IT=1A, VD=6V

3

V_GD 

Non-Trigger Gate Voltage, min

Tj =25℃,  VD=1/2VRRM

0.2

V

tgt

Turn On Time, max.

IT=(RMS),IG=100mA,VD=1/2VDRM,Tj=25℃,dIG/dt=1A/μS

10

V

dv/dt

Critical Rate of Rise on-State Voltage,min.

Tj=25℃,VD=2/3VDRM Exoponential wave.

500

V/μS

(dv/dt) c

Critical Rate of Rise off-State Voltage at commutation, min

Tj=25℃,VD=2/3VDRM di/dtc=15A/μS

5

V/μS

I_H

Holding Current, typ.

Tj =25℃

60

mA

R_th(j-c)

Thermal Impedance, max

Junction to case

0.9

℃/W