Висока можливість короткого замикання 10US 1200V IGBT Модуль 450A

Parameter

Symbol

CondMtMons

Value

UnMt

MMn.

Typ.

Max.

Gate-emitter Threshold Voltage

V_GE(th)

V_GE=V_CE, I_C =3mm,T_vj=25℃

5.0

6.2

7.0

V

Collector-Emitter Cut-off Current

I_CES

V_CE=1200V,V_GE=0V, T_vj=25℃

1.0

mm

V_CE=1200V,V_GE=0V, T_vj=125℃

5.0

mm

Collector-Emitter Saturation Voltage

V_CE(sat)

Ic=450m,V_GE=15V, T_vj=25℃

1.85

V

Ic=450m,V_GE=15V, T_vj=125℃

2.05

V

Input Capacitance

C_ies

V_CE=25V,V_GE =0V,

f=1MHz, T_vj=25℃

31.8

nF

Output Capacitance

C_oes

2.13

nF

Reverse Transfer Capacitance

C_res

1.48

nF

Internal Gate Resistance

Rgint

0.7

Ω

Turn-on Delay Time

t_d(on)

I_C =450 m V_CE = 600 V V_GE = ±15V R_G =3.3Ω

T_vj=25℃

320

ns

Rise Time

t_r

165

ns

Turn-off Delay Time

t_d(off)

650

ns

Fall Time

t_f

124

ns

Energy Dissipation During Turn-on

Time

E_on

35

mJ

Energy Dissipation During Turn-off

Time

E_off

42

mJ

Turn-on Delay Time

t_d(on)

I_C =450m V_CE = 600 V V_GE = ±15V R_G =3.3Ω

T_vj=125℃

350

ns

Rise Time

t_r

193

ns

Turn-off Delay Time

t_d(off)

720

ns

Fall Time

t_f

156

ns

Energy Dissipation During Turn-on

Time

E_on

55

mJ

Energy Dissipation During Turn-off

Time

E_off

64

mJ

SC Data

I_sc

T_p≤10us,V_GE=15V, Tv_j=150℃,V_cc=600V,

V_CEM≤1200V

2100

m