Тиристор високої потужності для фазових програм 1600 В

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

KP4350A

  1600

  1600

  1700

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

450 mA (3)

Critical rate of voltage rise

dV/dt (4)

300 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

  4350

A

Sinewave,180^o conduction,T_S=70^oC

Peak one cpstcle surge

(non repetitive) current

I_TSM

48900

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

11.9x10⁶

A²s

10.0 msec

Latching current

I_L

     1000

mA

V_D = 12 V; R_L= 12 ohms

Holding current

I_H

     450

mA

V_{D =} 12 V; I = 2.5 A

Peak on-state voltage

V_TM

     1.5

V

I_TM = 6000 A; Duty cpstcle £ 0.01%

T_j = 25 ^oC

Critical rate of rise of on-state

current (5)

di/dt

      200

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive