Оптимізований для низьких динамічних втрат тиристор RCT 2000V

VRRM (1)

VDRM (1)

VRSM (1)

  2000

2000

2100

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

10 mA

70 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)M

I_F(AV)M

360

223

A

Sinewave,180^o conduction,T_c=70^oC

RMS value of on-state current

I_TRMS

566

351

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

I_FSM

5000

3500

A

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

125x10³

61x10³

A²s

8.3 msec

Latching current

I_L

500

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

100

mA

V_{D =} 24 V; I =2.5 A

Peak on-state voltage

V_TM

V_FM

2.61

3.42

V

I_TM = 1000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

400

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

-

W

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

25

A

Gate current required to trigger all units

I_GT

400

mA

V_D = 10 V;I_T=3A;T_j = +25 ^oC

Gate voltage required to trigger all units

V_GT

2.5

V

V_D = 10 V;I_T=3A;T_j = +25 ^oC

Peak negative voltage

V_RGM

2

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_gd

1.0

ms

V_D=67% V_DRM, I_T=2000A, di/dt=60A/us, I_FG=2A, t_r=0.5us, T_j=25C

Turn-on time

t_gt

-

Turn-off time (with V_R = -5 V)

t_q

40

-

ms

I_TM=4000A, t_p=2000us, di/dt=60A/us, V_r=100V, V_dr=67%V_DRM, dV_dr/dt=200V/us

Reverse recovery current

I_rm

-

A

I_TM=4000A, t_p=2000us, di/dt=60A/us                                         

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+120

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

R_{Q (j-c)D}

55

140

88

165

K/kW

Double sided cooled

Single sided cooled

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R_{Q (c-s)}

10

20

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

F

8

12

-

kN

Weight

W

-

Kg

Sym

A

B

C

D

H

mm

68

45

62

3.5×3

20±1