Загальне призначення транзистор потужності низької напруги BD139

Symbol

Parameter

Polarity

Test conditions

Value

Unit

Min.

Typ.

Max.

ICBO

Collector cut-off current (I =0)

NPN

VCB = 30 V

VCB = 30 V, TC = 125 °C

0.1

10

µA

µA

PNP

VCB = -30 V

VCB = -30 V, TC = 125 °C

-0.1

-10

µA

µA

IEBO

Emitter cut-off current

(I  =0)

NPN

VEB = 5 V

10

µA

PNP

VEB = -5 V

-10

µA

VCEO(sus)(1)

Collector-emitter sustaining voltage (IB=0)

NPN

IC = 30 mA BD135

BD139

45

80

V V

PNP

IC = -30 mA BD136

BD140

-45

-80

V V

VCE(sat) (1)

Collector-emitter saturation voltage

NPN

IC = 0.5 A, IB = 0.05 A

0.5

V

PNP

IC = -0.5 A, IB = -0.05 A

-0.5

V

VBE (1)

Base-emitter voltage

NPN

IC = 0.5 A, VCE = 2 V

1

V

PNP

IC = -0.5 A, VCE = -2 V

-1

V

hFE (1)

DC current gain

NPN

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V

25

40

25

250

PNP

IC = -5 mA, VCE = -2 V

IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V

25

40

25

250

hFE (1)

hFE groups

NPN

IC = 150 mA, VCE = 2 V BD139-10

BD135-16/BD139-16

63

100

160

250

PNP

IC = -150 mA, VCE = -2 V BD140-10

BD136-16/BD140-16

63

100

160

250